圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SIHP5N50D-E3 | Vishay/Siliconix | TO-220-3 | MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:5 V,漏極連續電流... | ||||||
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SiHP5N50D-GE3 | Vishay/Siliconix | TO-220-3 | MOSFET 500V 5A 1.5Ohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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SIHP6N40D-E3 | Vishay/Siliconix | TO-220-3 | MOSFET 400V 1ohm@10V 6A N-Ch D-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:400 V,閘/源擊穿電壓:5 V,漏極連續電流... | ||||||
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SIHP7N60E-E3 | Vishay/Siliconix | TO-220AB | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,漏極連續電流:7 A,電阻汲極/源極... | ||||||
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SIHP7N60E-GE3 | Vishay/Siliconix | TO-220AB | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:4 V,漏極連續電流... | ||||||
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SIHP8N50D-E3 | Vishay/Siliconix | TO-220-3 | MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:5 V,漏極連續電流... | ||||||
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SiHP8N50D-GE3 | Vishay/Siliconix | TO-220-3 | 280 | MOSFET 500V 8A 850mOhm @ 10V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:30 V,漏極連續電... | ||||||
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SIHS36N50D-E3 | Vishay/Siliconix | SUPER-247?(TO-274AA) | MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,漏極連續電流:36 A,電阻汲極/源... | ||||||
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SIHU3N50D-E3 | Vishay/Siliconix | TO-251-3 短引線,IPak,TO-251AA | MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:5 V,漏極連續電流... | ||||||
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SiHU3N50D-GE3 | Vishay/Siliconix | TO-251AA | MOSFET 500V 3A 3.2Ohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:30 V,漏極連續電... | ||||||
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SIHU5N50D-E3 | Vishay/Siliconix | TO-251-3 短引線,IPak,TO-251AA | MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:5 V,漏極連續電流... | ||||||
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SiHU5N50D-GE3 | Vishay/Siliconix | TO-251-3 短引線,IPak,TO-251AA | MOSFET 500V 5A 1.5Ohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:30 V,漏極連續電... | ||||||
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SIHU7N60E-E3 | Vishay/Siliconix | TO-251-3 短引線,IPak,TO-251AA | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,漏極連續電流:7 A,電阻汲極/源極... | ||||||
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SIHU7N60E-GE3 | Vishay/Siliconix | TO-251AA | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:4 V,漏極連續電流... | ||||||
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SIHW30N60E-GE3 | Vishay/Siliconix | TO-3P-3 整包 | 159 | MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:4 V,漏極連續電流... | ||||||
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SIHW33N60E-GE3 | Vishay/Siliconix | TO-247AD | MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:4 V,漏極連續電流... | ||||||
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SIHW47N60E-GE3 | Vishay/Siliconix | TO-3P-3 整包 | 265 | MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:4 V,漏極連續電流... | ||||||
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SIHW73N60E-GE3 | Vishay/Siliconix | TO-247AD | MOSFET 650V 99mOhm@10V 33A N-Ch E-SRS | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,漏極連續電流:73 A,電阻汲極/源... | ||||||
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SIJ400DP-T1-GE3 | Vishay/Siliconix | PowerPAK? SO-8 | MOSFET 30V 32A 69.4W 4.0mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,包裝形式:Reel,零件號別名:SIJ400DP-GE3,... | ||||||
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SIJ482DP-T1-GE3 | Vishay/Siliconix | PowerPAK? SO-8 | MOSFET 80V 6.2mOhm@10V 60A N-Ch MV T-FET | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:2.7 V,漏極連續電... |
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