圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SI3471DV-T1-GE3 | Vishay/Siliconix | TSOP-6 | MOSFET 12V 6.8A 2.0W 31mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI3473CDV-T1-E3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | MOSFET 12V 8.0A 4.2W 22mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI3473CDV-T1-GE3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | MOSFET 12V 8.0A 4.2W 22mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI3473DV-T1 | Vishay/Siliconix | TSOP-6 | MOSFET 12V 7.9A 1.1W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI3473DV-T1-E3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | MOSFET 12V 7.9A 2.0W 19mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI3473DV-T1-GE3 | Vishay/Siliconix | 6-TSOP | MOSFET 12V 7.9A 2.0W 23mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI3475DV-T1-E3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI3475DV-T1-GE3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI3477DV-T1-GE3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | 78 | MOSFET -12V 17.5mOhm@4.5V 8A P-Ch G-III | |
參數:制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 12 V,閘/源擊穿電壓:+/- 10 V,漏極連續電流:- 8 A... | ||||||
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SI3867DV-T1 | Vishay/Siliconix | TSOP-6 | MOSFET 20V 5.1A 1.1W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3867DV-T1-E3 | Vishay/Siliconix | SOT-23-6 細型,TSOT-23-6 | MOSFET 20V 5.1A 2.0W 51mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3867DV-T1-GE3 | Vishay/Siliconix | 6-TSOP | MOSFET 20V 5.1A 2.0W 51mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3872DV-T1 | Vishay/Siliconix | TSOP-6 | MOSFET 30/-20V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 20 V,漏極連續電流:... | ||||||
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SI3872DV-T1-E3 | Vishay/Siliconix | TSOP-6 | MOSFET 30/-20V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V, 20 V,漏極連續電流:... | ||||||
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SI3879DV-T1-E3 | Vishay/Siliconix | 6-TSOP | MOSFET 20V 5.0A 3.3W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3879DV-T1-GE3 | Vishay/Siliconix | 6-TSOP | MOSFET 20V 5.0A 3.3W 70mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3900DV-T1 | Vishay/Siliconix | TSOP-6 | MOSFET 20V 2.4A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3900DV-T1-E3 | Vishay/Siliconix | 6-TSOP | MOSFET 20V 2.4A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3900DV-T1-GE3 | Vishay/Siliconix | 6-TSOP | MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI3905DV-T1 | Vishay/Siliconix | TSOP-6 | MOSFET 8V 2.5A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續... |
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