圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SI6469DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 8V 6A 1.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SI6469DQ-T1-E3 | Vishay/Siliconix | 8-TSSOP(0.173",4.40mm 寬) | MOSFET 8V 6A 1.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SI6469DQ-T1-GE3 | Vishay/Siliconix | 8-TSSOP(0.173",4.40mm 寬) | MOSFET 8.0V 6.0A 1.5W 28mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:8 V,閘/源擊穿電壓:+/- 8 V,漏極連續(xù)... | ||||||
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SI6473DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 20V 9.5A 1.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI6473DQ-T1-E3 | Vishay/Siliconix | 8-TSSOP(0.173",4.40mm 寬) | MOSFET 20V 9.5A 1.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI6473DQ-T1-GE3 | Vishay/Siliconix | 8-TSSOP(0.173",4.40mm 寬) | MOSFET 20V 9.5A 1.75W 12.5mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI6475DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 12V 10A 1.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI6475DQ-T1-E3 | Vishay/Siliconix | TSSOP-8 | MOSFET 12V 10A 1.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI6475DQ-T1-GE3 | Vishay/Siliconix | TSSOP-8 | MOSFET 12V 10A 1.75W 11mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI6542DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 20V 2.5/1.9A | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+/- 20 V,閘/源擊穿電壓:+/- 20 V,漏極連續(xù)... | ||||||
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SI6543DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 30V 3.9/2.5A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6543DQ-T1-E3 | Vishay/Siliconix | TSSOP-8 | MOSFET 30V 3.9/2.5A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6543DQ-T1-GE3 | Vishay/Siliconix | TSSOP-8 | MOSFET 30V 3.9/2.5A 1.0W 6.5/8.5mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6544BDQ-T1-E3 | Vishay/Siliconix | 8-TSSOP | MOSFET 30V 4/3.5A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6544BDQ-T1-GE3 | Vishay/Siliconix | 8-TSSOP | MOSFET N/P-Ch MOSFET 30V 32/43mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6544DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 30V 4/3.5A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6544DQ-T1-E3 | Vishay/Siliconix | TSSOP-8 | MOSFET 30V 4/3.5A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 2... | ||||||
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SI6552DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 20V/12V | ||
參數(shù):制造商:Vishay,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V, - 12 V,閘/源擊穿電壓:+/- 8 V,漏... | ||||||
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SI6562CDQ-T1-GE3 | Vishay/Siliconix | 8-TSSOP | MOSFET 20V 6.7/6.1A 22/30mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... | ||||||
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SI6562DQ-T1 | Vishay/Siliconix | TSSOP-8 | MOSFET 20V 4.5/3.5A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 1... |
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