圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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US6M1TR | ROHM Semiconductor | TUMT6 | MOSFET N+P 30 20V 1A | ||
參數:制造商:ROHM Semiconductor,產品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+ 30 V... | ||||||
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US6M2TR | ROHM Semiconductor | TUMT6 | 100,143 | MOSFET N+P 20V 1.5A/1A | |
參數:制造商:ROHM Semiconductor,產品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+ 30 V... | ||||||
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UCC27516DRSR | Texas Instruments | 6-SON(3x3) | 38,745 | MOSFET 4A/4A Sgl Ch Hi-Spd Lo-side Gate Drvr | |
參數:制造商:Texas Instruments,產品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數量:3000,... | ||||||
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UCC27524DGNR | Texas Instruments | 8-HVSSOP | MOSFET Dual,5A,Hi-Spd Lo- Side Pwr MOSFET Drvr | ||
參數:制造商:Texas Instruments,產品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數量:2500,... | ||||||
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UM5K1NTR | ROHM Semiconductor | UMT5 | MOSFET 2N-CH 30V .1A SOT-363 | ||
參數:制造商:ROHM Semiconductor,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓... | ||||||
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UM6J1NTN | ROHM Semiconductor | UMT6 | 2,840 | MOSFET TRANS MOSFET PCH 30V 0.2A 6PIN | |
參數:制造商:ROHM Semiconductor,RoHS:是,包裝形式:Reel,工廠包裝數量:1,... | ||||||
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UM6K1NTN | ROHM Semiconductor | UMT6 | 255,514 | MOSFET 2N-CH 30V .1A SOT-363 | |
參數:制造商:ROHM Semiconductor,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓... | ||||||
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SQJ412EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 40V 32A 83W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:32 A,電阻汲極/... | ||||||
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SQJ456EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 100V 32A 83W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:32 A,電阻汲極/... | ||||||
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SQJ460EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 60V 32A 83W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SQJ461EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 60V 30A 83W P-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:- 30 A,電阻汲... | ||||||
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SQJ463EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 40V 30A 83W P-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:- 30 A,電阻汲... | ||||||
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SQJ469EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 80V 32A 100W P-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:- 32 A,電阻汲... | ||||||
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SQJ840EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 30V 30A 46W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:30 A,電阻汲極/... | ||||||
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SQJ844EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 30V 8A 48W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:8 A,電阻汲極/源... | ||||||
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SQJ848EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 40V 30A 68W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SQJ850EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 60V 24A 45W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:24 A,電阻汲極/... | ||||||
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SQJ912EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L | MOSFET 40V 8A 48W N-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SQJ941EP-T1-GE3 | Vishay/Siliconix | PowerPAK? SO-8 雙 | MOSFET 30V 8A 55W P-Ch Automotive | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,閘/源擊穿電壓:+/- 20 V,漏極連續電流:- 8 A,電阻汲極... | ||||||
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SQJ960EP-T1-GE3 | Vishay/Siliconix | PowerPAK SO-8L Dual | MOSFET 60V 8A 34W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:20 V,漏極連續電流... |
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