Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉換計算機、手機和通信基礎架構中的電源,也可用計算機磁盤驅動器和汽車系統中的運動控制。 Vishay/Siliconix模擬開關IC用于對儀表儀器和多種工業產品中的模擬信號進行感應、開關和路徑設定。 |
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SI2337DS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 80V 2.2A 2.5W 270mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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Si2338DS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 30 Volts 6 Amps 2.5 Watts | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SI2341DS-T1-E3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 30V 2.8A 0.9W 72 mohms @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI2341DS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 30V 2.8A 0.9W 72mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI2343CDS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 30V 5.9A P-CH MOSFET | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:5.9 A,電... | ||||||
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SI2343DS-T1 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 30V 4.0A 0.75W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI2343DS-T1-E3 | Vishay/Siliconix | TO-236-3,SC-59,SOT-23-3 | 42,994 | MOSFET 30V 4.0A 1.25W 53 mohms @ 10V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI2343DS-T1-GE3 | Vishay/Siliconix | TO-236-3,SC-59,SOT-23-3 | 13 | MOSFET 30V 4.0A 1.25W 53mohm @ 10V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI2351DS-T1-E3 | Vishay/Siliconix | TO-236-3,SC-59,SOT-23-3 | MOSFET 20V 3.0A 2.1W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI2351DS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 20V 3.0A 2.1W 115 mohms @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI2365EDS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET -20V 32mOhm@4.5V 5.9A P-Ch G-III | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,漏極連續電流:- 5.9 A,電阻... | ||||||
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Si2366DS-T1-GE3 | Vishay/Siliconix | TO-236-3,SC-59,SOT-23-3 | 23,131 | MOSFET 30 Volts 5.8 Amps 2.1 Watts | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SI2367DS-T1-GE3 | Vishay/Siliconix | TO-236-3,SC-59,SOT-23-3 | 11 | MOSFET 20V 3.8A 1.7W 66mohm @ 4.5V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,包裝形式:Reel,零件號別名:SI2367DS-GE3,... | ||||||
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SI2377EDS-T1-GE3 | Vishay/Siliconix | SOT-23-3(TO-236) | MOSFET 20V 4.4A P-CH MOSFET | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,漏極連續電流:- 4.4 A,電阻汲極/源極 RDS(導通... | ||||||
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SI1033X-T1 | Vishay/Siliconix | SC-89-6 | MOSFET 20V 0.15A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 5 V,漏極連... | ||||||
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SI1033X-T1-E3 | Vishay/Siliconix | SC-89(SOT-563F) | MOSFET 20V 0.15A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 5 V,漏極連... | ||||||
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SI1033X-T1-GE3 | Vishay/Siliconix | SC-89(SOT-563F) | MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 5 V,漏極連... | ||||||
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SI1032R-T1 | Vishay/Siliconix | SC-75A-3 | MOSFET 20V 0.2A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1032R-T1-E3 | Vishay/Siliconix | SC-75A | MOSFET 20V 0.2A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1032R-T1-GE3 | Vishay/Siliconix | SC-75,SOT-416 | 23,359 | MOSFET 20V 200mA 280mW 5.0ohm @ 4.5V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... |
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