Infineon Technologies
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圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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BSC105N10LSF G | Infineon Technologies | TDSON | MOSFET OptiMOS2 PWR Transistor N-CH | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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BSC106N025S G | Infineon Technologies | PG-TDSON-8-1 | MOSFET OptiMOS2 PWR Transistor N-CH | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:25 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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BSC109N10NS3 G | Infineon Technologies | MOSFET N-Channel 100V MOSFET | |||
參數(shù):制造商:Infineon,RoHS:是,包裝形式:Reel,零件號(hào)別名:BSC109N10NS3GATMA1 BSC109N10NS3GXT SP0007781... | ||||||
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BSC110N06NS3 G | Infineon Technologies | TDSON | 12611 | MOSFET OptiMOS2 PWR Transistor N-CH | |
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 12 V,... | ||||||
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BSC118N10NS G | Infineon Technologies | TDSON | MOSFET OptiMOS 2 PWR TRANST 100V 71A | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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BSC119N03LSC G | Infineon Technologies | MOSFET N-KANAL POWER MOS | |||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數(shù)量:5000,零件號(hào)別名:BSC119N03LSCGATMA1 B... | ||||||
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BSC119N03MSC G | Infineon Technologies | MOSFET N-KANAL POWER MOS | |||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數(shù)量:5000,零件號(hào)別名:BSC119N03MSCGATMA1 B... | ||||||
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BSC119N03S G | Infineon Technologies | PG-TDSON-8-1 | MOSFET N-CH 30V 11.9A | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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BSC120N03LS G | Infineon Technologies | TDSON | 4123 | MOSFET OptiMOS 3 N-CH 30V 39A 12mOhms | |
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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BSC120N03MS G | Infineon Technologies | TDSON | 12121 | MOSFET OptiMOS 3 M-SERIES N-CH 30V 39A 12mOhms | |
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 16 V,... | ||||||
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BSC123N08NS3 G | Infineon Technologies | TDSON | MOSFET OptiMOS2 PWR Transistor N-CH | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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BSC123N10LS G | Infineon Technologies | TDSON | MOSFET OptiMOS2 PWR Transistor N-CH | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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BSC12DN20NS3G | Infineon Technologies | PG-TDSON-8 | MOSFET N-CH 200V 11.3A | ||
參數(shù):制造商:Infineon,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:11.3 A,電... | ||||||
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BSC130P03LS G | Infineon Technologies | TDSON | 21 | MOSFET OPTIMOS P-CH -30V -22.5A 13mOhm | |
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 30 V,閘/源擊穿電壓:+/- 25 ... | ||||||
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BSC150N03LD G | Infineon Technologies | TDSON-8 | 1214 | MOSFET 30V SO-8 | |
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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BSC152N10NSF G | Infineon Technologies | TDSON | MOSFET OptiMOS2 PWR Transistor N-CH | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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BSC159N10LSF G | Infineon Technologies | TDSON | MOSFET OptiMOS2 PWR Transistor N-CH | ||
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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BSC160N10NS3 G | Infineon Technologies | TDSON-8 | 4926 | MOSFET N-KANAL POWER MOS | |
參數(shù):制造商:Infineon,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
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BSC16DN25NS3G | Infineon Technologies | PG-TDSON-8 | 4695 | MOSFET N-CH 250V 10.9A | |
參數(shù):制造商:Infineon,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:10.9 A,電... | ||||||
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BSC190N12NS3 G | Infineon Technologies | TDSON-8 | 5647 | MOSFET N-channel POWER MOS | |
參數(shù):制造商:Infineon,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:120 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流:44 A,電阻汲... |
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