| 圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
|
ALD110808ASCL | Advanced Linear Devices | 16-SOIC | MOSFET Quad EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
ALD110808PCL | Advanced Linear Devices | 16-PDIP | MOSFET Quad EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
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ALD110808SCL | Advanced Linear Devices | 16-SOIC | MOSFET Quad EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
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ALD110814PCL | Advanced Linear Devices | 16-PDIP | MOSFET Quad EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
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ALD110814SCL | Advanced Linear Devices | 16-SOIC | 12 | MOSFET Quad EPAD(R) N-Ch | |
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
|
ALD1108EPCL | Advanced Linear Devices | 16-PDIP | MOSFET Quad EPAD(R) Prog | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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ALD1108ESCL | Advanced Linear Devices | 16-SOIC | MOSFET Quad EPAD(R) Prog | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
ALD110900APAL | Advanced Linear Devices | 8-PDIP | 46 | MOSFET Dual EPAD(R) N-Ch | |
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
ALD110900ASAL | Advanced Linear Devices | 8-SOIC | 22 | MOSFET Dual EPAD(R) N-Ch | |
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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ALD110900PAL | Advanced Linear Devices | 8-PDIP | 4 | MOSFET Dual EPAD(R) N-Ch | |
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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ALD110900SAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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ALD110902PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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ALD110902SAL | Advanced Linear Devices | 8-SOIC | 40 | MOSFET Dual EPAD(R) N-Ch | |
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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ALD110904PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual N-Channel EPAD | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
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ALD110904SAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual N-Channel EPAD | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
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ALD110908APAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
|
ALD110908ASAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
|
ALD110908PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
|
ALD110908SAL | Advanced Linear Devices | 8-SOIC | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
|
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ALD110914PAL | Advanced Linear Devices | 8-PDIP | MOSFET Dual EPAD(R) N-Ch | ||
| 參數：制造商：Advanced Linear Devices，產品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：10 V，閘/... | ||||||
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