圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SIS452DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 12V 35A N-CH MOSFET | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,漏極連續(xù)電流:35 A,電阻汲極/源極 RDS(導(dǎo)通):0.0... | ||||||
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SIS454DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | 10,539 | MOSFET 20V 35A N-CH MOSFET | |
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,漏極連續(xù)電流:35 A,電阻汲極/源極 RDS(導(dǎo)通):0.0... | ||||||
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SIS456DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 35A N-CH MOSFET | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續(xù)電流:35 A,電阻汲極/源極 RDS(導(dǎo)通):0.0... | ||||||
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SIS468DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 80V 19.5mOhm@10V 30A N-Ch MV T-FET | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:80 V,閘/源擊穿電壓:3 V,漏極連續(xù)電流:... | ||||||
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SIS472DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | 19,925 | MOSFET 30 Volts 20 Amps 28 Watts | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流... | ||||||
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SIS476DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | 32,900 | MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:2.3 V,漏極連續(xù)電... | ||||||
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SIS478DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 12A N-CH MOSFET | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,漏極連續(xù)電流:12 A,電阻汲極/源極 RDS(導(dǎo)通):0.0... | ||||||
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SiS778DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30 Volts 35 Amps 52 Watts | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流... | ||||||
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SiS780DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | 1 | MOSFET 30 Volts 18 Amps 27.7 Watts | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流... | ||||||
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SiS782DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30 Volts 16 Amps 41 Watts | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續(xù)電流... | ||||||
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SIS890DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | 2,484 | MOSFET 100V 23.5mOhm@10V 30A N-Ch MV T-FET | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:3 V,漏極連續(xù)電流... | ||||||
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SIS892ADN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 100V 33mOhm@10V 28A N-Ch MV T-FET | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,漏極連續(xù)電流:28 A,電阻汲極/源... | ||||||
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SIS892DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 100V 30A 43W 29 mohms @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SIS902DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 雙 | MOSFET 75V 4.0A 15.4W 186mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SISA04DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | MOSFET 30V 2.15mOhm@10V 40A N-Ch G-IV | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+ 20 V, - 1... | ||||||
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SISA10DN-T1-GE3 | Vishay/Siliconix | PowerPAK? 1212-8 | 5,820 | MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:2.2 V,漏極連續(xù)電... | ||||||
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SISA12ADN-T1-GE3 | Vishay Semiconductors | PowerPAK? 1212-8 | 2,975 | MOSFET 30V 4.3mOhm@10V 25A N-Ch | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,... | ||||||
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SISA12DN-T1-GE3 | Vishay/Siliconix | PowerPAK 1212-8 | MOSFET 30V 25A 28W 4.3mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:2.2 V,漏極連續(xù)電... | ||||||
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SISA14DN-T1-GE3 | Vishay Semiconductors | PowerPAK? 1212-8 | 22,270 | MOSFET 30V 5.1mOhm@10V 14.1A N-Ch G-IV | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,... | ||||||
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SISA18ADN-T1-GE3 | Vishay Semiconductors | PowerPAK? 1212-8 | 9,686 | MOSFET 30V 7.5mOhm@10V 18A N-Ch G-IV | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,... |
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