圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SI5944DU-T1-GE3 | Vishay/Siliconix | PowerPAK? ChipFet 雙 | MOSFET 40V 6.0A 10W 112mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5947DU-T1-E3 | Vishay/Siliconix | PowerPAK? ChipFet 雙 | MOSFET DUAL P-CH 20V(D-S) | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI5947DU-T1-GE3 | Vishay/Siliconix | PowerPAK? ChipFet 雙 | MOSFET 20V 6.0A 10.4W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI5975DC-T1 | Vishay/Siliconix | 1206-8 ChipFET | MOSFET 12V 4.1A 2.1W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI5975DC-T1-E3 | Vishay/Siliconix | 1206-8 ChipFET? | MOSFET 12V 4.1A 2.1W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI5980DU-T1-GE3 | Vishay/Siliconix | PowerPAK? ChipFet 雙 | MOSFET 100V 2.5A 7.8W .567Ohms @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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SI5997DU-T1-GE3 | Vishay/Siliconix | PowerPAK? ChipFet 雙 | MOSFET 30V 6A 10.4W 54mOhms @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 30 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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SI5999EDU-T1-GE3 | Vishay/Siliconix | PowerPAK? ChipFet 雙 | MOSFET 20V 6A DUAL P-CH MOSFET | ||
參數(shù):制造商:Vishay,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 20 V,漏極連續(xù)電流:- 6 A,電阻汲極/源極 RDS(導(dǎo)通):... | ||||||
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SI5401DC-T1-E3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI5401DC-T1-GE3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SI5402BDC-T1-E3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 30V 6.7A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5402BDC-T1-GE3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5402DC-T1 | Vishay/Siliconix | 1206-8 ChipFET | MOSFET 30V 6.7A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5402DC-T1-E3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 30V 6.7A 2.5W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5402DC-T1-GE3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5402DC-T2 | Vishay/Siliconix | 1206-8 ChipFET | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5402DC-T3 | Vishay/Siliconix | 1206-8 ChipFET | MOSFET 30V 6.7A 2.5W 35mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI5403DC-T1-GE3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 30V 6.0A 6.3W 30mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 30 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
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SI5404BDC-T1-E3 | Vishay/Siliconix | 1206-8 ChipFET? | 1 | MOSFET 20 Volt 7.5 Amp 2.5W | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI5404BDC-T1-GE3 | Vishay/Siliconix | 8-SMD,扁平引線 | MOSFET 20V 7.5A 2.5W 28mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 12 V,漏極... |
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