圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
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SI4304DY-T1-GE3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 36A 7.8W 3.2mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4310BDY-T1-E3 | Vishay/Siliconix | 14-SOIC | MOSFET 30V 10/14A 1.14/1.47 | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4276DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30 Volts 8 Amps 2.8 Watts | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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Si4286DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 40 Volts 7 Amps 2.9 Watts | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SI4288DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 40 Volts 9.2 Amps 3.1 Watts | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SI4300DY | Vishay/Siliconix | SOIC-8 Narrow | MOSFET N-CH MOSFET | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:6.4 A,電... | ||||||
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SI4300DY-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET N-CH MOSFET | ||
參數:制造商:Vishay,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:6.4 A,電... | ||||||
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SI4300DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30 Volt 9.0 Amp 2.5W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4320DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 25A 1.6W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4320DY-T1-E3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 25A 3.5W 3.0mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4320DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 25A 3.5W 3.0mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4334DY-T1-E3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 14.8A 5.2W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4334DY-T1-GE3 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 14.8A 5.2W 13.5mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4336DY-T1 | Vishay/Siliconix | SOIC-8 Narrow | MOSFET 30V 25A 1.6W | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4336DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 25A 3.5W 3.25mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
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SI4340CDY-T1-E3 | Vishay/Siliconix | 14-SOIC | 612 | MOSFET 20V 14.1/20A 3/5.4W 9.4/8.0mohm @ 10V | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 20 V, +... | ||||||
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Si4340DDY-T1-GE3 | Vishay/Siliconix | SOIC-14 | MOSFET 20 Volts 14.8 Amps 3 Watts | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
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SI4340DY-T1-E3 | Vishay/Siliconix | 14-SOIC | MOSFET DUAL N-CH 20V (D-S) W/ SCHOTTKY | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 20 V, +... | ||||||
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SI4346DY-T1-E3 | Vishay/Siliconix | 8-SOIC(0.154",3.90mm 寬) | MOSFET 30V 8.0A 2.5W 23mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SI4346DY-T1-GE3 | Vishay/Siliconix | 8-SOIC | MOSFET 30V 8.0A 2.5W 23mohm @ 10V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... |
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