圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
---|---|---|---|---|---|---|
![]() |
VQ1000J | Vishay/Siliconix | PDIP-14 | MOSFET QD 60V 0.225A | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0.225 A... | ||||||
![]() |
VQ1000P | Vishay/Siliconix | TO-226AA-14 | MOSFET QD 60V 0.225A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
VQ1000P-E3 | Vishay/Siliconix | PDIP-14 | MOSFET N-CH 60V 0.225A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
VQ1001J | Vishay/Siliconix | PDIP-14 | MOSFET QD 30V 0.83A | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 30 V,漏極連續電流:0.83 A,... | ||||||
![]() |
VQ1001P | Vishay/Siliconix | 14-DIP | MOSFET QD 30V 0.53A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
VQ1004J | Vishay/Siliconix | PDIP-14 | MOSFET QD 60V 0.46A | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 30 V,漏極連續電流:0.46 A,... | ||||||
![]() |
VQ1004P | Vishay/Siliconix | - | MOSFET QD 60V 0.46A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
VQ1006P | Vishay/Siliconix | 14-DIP | MOSFET 90V QUAD N-CHANNEL MOSFET | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:N-Channel,汲極/源極擊穿電壓:90 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
VQ2001J | Vishay/Siliconix | PDIP-14 | MOSFET Quad 30V 0.6A | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0.6 A,電... | ||||||
![]() |
VQ2001P | Vishay/Siliconix | - | MOSFET Quad 30V 0.6A | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
VQ2004J | Vishay/Siliconix | PDIP-14 | MOSFET Quad 60V 0.41A | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 60 V,閘/源擊穿電壓:+/- 30 V,漏極連續電流:0.41 ... | ||||||
![]() |
VQ3001J | Vishay/Siliconix | PDIP-14 | MOSFET 30V 0.85/0.6A | ||
參數:制造商:Vishay,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0... | ||||||
![]() |
VQ3001P | Vishay/Siliconix | SBCDIP-14 | MOSFET DUAL N & P CH 30V | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:過渡期間,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+/- 30 V,閘/源擊穿電... | ||||||
![]() |
VP0104N3 | Supertex | TO-92 | MOSFET 40V 8Ohm | ||
參數:制造商:Supertex,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 40 V,閘/源擊穿電壓:+/- 20 ... | ||||||
![]() |
VP0104N3-G | Supertex | TO-92-3 | 1811 | MOSFET 40V 8Ohm | |
參數:制造商:Supertex,產品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 40 V,閘/源擊穿電壓:+/- 20 ... | ||||||
![]() |
VP0104N3-GP002 | Supertex | TO-92-3 | MOSFET | ||
參數:制造商:Supertex,晶體管極性:P-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0.25 A,電阻汲極/... | ||||||
![]() |
VP0104N3-GP003 | Supertex | TO-92-3 | MOSFET | ||
參數:制造商:Supertex,晶體管極性:P-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0.25 A,電阻汲極/... | ||||||
![]() |
VP0104N3-GP013 | Supertex | TO-92-3 | MOSFET | ||
參數:制造商:Supertex,晶體管極性:P-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0.25 A,電阻汲極/... | ||||||
![]() |
VP0104N3-GP014 | Supertex | TO-92-3 | MOSFET | ||
參數:制造商:Supertex,晶體管極性:P-Channel,汲極/源極擊穿電壓:40 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:0.25 A,電阻汲極/... | ||||||
![]() |
VP0104N3-P002 | Supertex | TO-92 | MOSFET 40V 8Ohm | ||
參數:制造商:Supertex,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 40 V,閘/源擊穿電壓:+/- 20 ... |
437/1298 首頁 上頁 [432] [433] [434] [435] [436] [437] [438] [439] [440] [441] [442] 下頁 尾頁