圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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IRFBC30ASTRRPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 600V 3.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC30LPBF | Vishay/Siliconix | TO-262-3,長(zhǎng)引線,I2Pak,TO-262AA | MOSFET N-Chan 600V 3.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC30PBF | Vishay/Siliconix | TO-220-3 | 17,381 | MOSFET N-Chan 600V 3.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC30S | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 600V 3.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC30SPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 600V 3.6 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC30STRLPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 52 | MOSFET N-Chan 600V 3.6 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC40 | Vishay/Siliconix | TO-220AB | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC40_R4943 | Fairchild Semiconductor | MOSFET TO-220AB | |||
參數(shù):制造商:Fairchild Semiconductor,RoHS:否,... | ||||||
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IRFBC40A | Vishay/Siliconix | TO-220AB | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40APBF | Vishay/Siliconix | TO-220AB | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40AS | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40ASPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 464 | MOSFET N-Chan 600V 6.2 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40ASTRL | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40ASTRLPBF | Vishay/Siliconix | TO-263-3,D2Pak(2 引線 + 接片),TO-263AB | 800 | MOSFET N-Chan 600V 6.2 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40ASTRRPBF | Vishay/Siliconix | D2PAK(TO-263) | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40L | Vishay/Siliconix | TO-262-3,長(zhǎng)引線,I2Pak,TO-262AA | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFBC40LC | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40LCPBF | Vishay/Siliconix | TO-220-3 | 20,090 | MOSFET N-Chan 600V 6.2 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40LCSPBF | Vishay/Siliconix | D2PAK | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 30 V,漏... | ||||||
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IRFBC40LPBF | Vishay/Siliconix | TO-262-3 | MOSFET N-Chan 600V 6.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類(lèi):MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... |
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