Vishay/Siliconix
|
Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉換計算機、手機和通信基礎架構中的電源,也可用計算機磁盤驅動器和汽車系統中的運動控制。 Vishay/Siliconix模擬開關IC用于對儀表儀器和多種工業產品中的模擬信號進行感應、開關和路徑設定。 |
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
---|---|---|---|---|---|---|
![]() |
IRFBG20PBF | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 1000V 1.4 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:1000 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
|
IRFBG30 | Vishay/Siliconix | TO-220-3 | MOSFET 1000V Single N-Channel HEXFET | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:1000 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IRFBG30PBF | Vishay/Siliconix | TO-220-3 | 13,237 | MOSFET 1000V Single N-Channel HEXFET | |
參數:制造商:Vishay,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:1000 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IRFD010 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 50V 1.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:50 V,漏極連續電流:1.7 A,配置:Sin... | ||||||
![]() |
IRFD014 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 60V 1.7 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
IRFD020 | Vishay/Siliconix | HVMDIP | MOSFET N-Chan 50V 2.4 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:50 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
IRFD024 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 60V 2.5 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
IRFD113 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 100V 1.0 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,包裝形式:Tube,工廠包裝數量:2500,... | ||||||
![]() |
IRFD123 | Vishay/Siliconix | HexDIP-4 | MOSFET N-Chan 100V 1.3 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD210 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 200V 0.6 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD213 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 200V 0.6 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,包裝形式:Tube,工廠包裝數量:2500,... | ||||||
![]() |
IRFD214 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 250V 0.45 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD220 | Vishay/Siliconix | 4-DIP(0.300",7.62mm) | MOSFET N-Chan 200V 0.8 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD310 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 400V 0.35 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:400 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD320 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 400V 0.49 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:400 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD420 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 400V 0.37 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:500 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
![]() |
IRFD9010 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 50V 1.1 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:50 V,閘/源擊穿電壓:20 V,漏極連續電流... | ||||||
![]() |
IRFD9014 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 60V 1.1 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
IRFD9020 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 60V 1.6 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... | ||||||
![]() |
IRFD9024 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 60V 1.6 Amp | ||
參數:制造商:Vishay,產品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,漏極... |
194/219 首頁 上頁 [189] [190] [191] [192] [193] [194] [195] [196] [197] [198] [199] 下頁 尾頁