Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計算機(jī)磁盤驅(qū)動器和汽車系統(tǒng)中的運動控制。 Vishay/Siliconix模擬開關(guān)IC用于對儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號 | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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SI1032X-T1 | Vishay/Siliconix | SC-89-3 | MOSFET 20V 0.2A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1032X-T1-E3 | Vishay/Siliconix | SC-89-3 | MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1032X-T1-GE3 | Vishay/Siliconix | SC-89,SOT-490 | 7,380 | MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1031R-T1 | Vishay/Siliconix | SC-75A-3 | MOSFET 20V 0.15A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1031R-T1-E3 | Vishay/Siliconix | SC-75A | MOSFET 20V 0.15A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1031R-T1-GE3 | Vishay/Siliconix | SC-75,SOT-416 | 21,568 | MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1031X-T1 | Vishay/Siliconix | SC-89-3 | MOSFET 20V 0.15A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1031X-T1-E3 | Vishay/Siliconix | SC-75A | MOSFET 20V 0.15A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1031X-T1-GE3 | Vishay/Siliconix | SC-75A | MOSFET 20V 150mA 340mW 8.0ohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:P-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 6 V,漏極連... | ||||||
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SI1035X-T1 | Vishay/Siliconix | SC-89-6 | MOSFET 20V 0.2/0.15A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+/- 20 V,閘/源擊穿電壓:+... | ||||||
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SI1035X-T1-E3 | Vishay/Siliconix | SC-89(SOT-563F) | MOSFET 20V 0.2/0.15A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+/- 20 V,閘/源擊穿電壓:+... | ||||||
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SI1035X-T1-GE3 | Vishay/Siliconix | SC-89(SOT-563F) | 7,798 | MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N and P-Channel,汲極/源極擊穿電壓:+/- 20 V,閘/源擊穿電壓:+... | ||||||
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SI1034X-T1 | Vishay/Siliconix | SC-89-6 | MOSFET 20V 0.2A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 5 V,漏極連... | ||||||
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SI1034X-T1-E3 | Vishay/Siliconix | SC-89(SOT-563F) | MOSFET 20V 0.2A | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 5 V,漏極連... | ||||||
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SI1034X-T1-GE3 | Vishay/Siliconix | SC-89(SOT-563F) | 5,914 | MOSFET Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:20 V,閘/源擊穿電壓:+/- 5 V,漏極連... | ||||||
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SI2601DN-T1-GE3 | Vishay/Siliconix | MOSFET 20V 19mohm @ 4.5V | |||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,包裝形式:Reel,工廠包裝數(shù)量:3000,零件號別名:SI2601DN-GE3,... | ||||||
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SIA400EDJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | 173,023 | MOSFET 30V 12A 19.2W 19mOhms @ 4.5V | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SIA406DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 12V 4.5A 19W 19.8mohm @ 4.5V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:12 V,閘/源擊穿電壓:+/- 8 V,漏極連... | ||||||
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SIA408DJ-T1-E3 | Vishay/Siliconix | PowerPAK SC-70-6L | MOSFET 30V 4.5A 17.9W | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... | ||||||
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SIA408DJ-T1-GE3 | Vishay/Siliconix | PowerPAK? SC-70-6 | MOSFET 30V 4.5A 17.9W 36mohm @ 10V | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 12 V,漏極... |
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