Infineon Technologies
|
圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
---|---|---|---|---|---|---|
![]() |
IPD30N06S223 | Infineon Technologies | TO-252 | MOSFET | ||
參數:制造商:Infineon,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:30 A,電阻汲極/源極... | ||||||
![]() |
IPD30N06S2-23 | Infineon Technologies | TO-252 | MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 23mOhms | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD30N06S2L-13 | Infineon Technologies | TO-252-3,DPak(2 引線 + 接片),SC-63 | MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 13mOhms | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD30N06S2L-23 | Infineon Technologies | TO-252 | 3777 | MOSFET OPTIMOS PWR-TRANS N-CH 55V 30A 23mOhms | |
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD30N06S3-24 | Infineon Technologies | TO-252 | MOSFET OPTIMOS-T N-CH 55V 30A 24mOhms | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD30N06S3L-20 | Infineon Technologies | TO-252 | MOSFET OPTIMOS-T N-CH 55V 30A 20mOhms | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:55 V,閘/源擊穿電壓:+/- 16 V,... | ||||||
![]() |
IPD30N06S4L-23 | Infineon Technologies | MOSFET N-Channel 60V MOSFET | |||
參數:制造商:Infineon,RoHS:是,包裝形式:Reel,零件號別名:IPD30N06S4L23ATMA1 IPD30N06S4L23ATMA2 SP0003... | ||||||
![]() |
IPD30N08S222 | Infineon Technologies | TO-252 | MOSFET | ||
參數:制造商:Infineon,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:30 A,電阻汲極/源極... | ||||||
![]() |
IPD30N08S2-22 | Infineon Technologies | TO-252 | 2363 | MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 21.5mOhm | |
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD30N08S2L21 | Infineon Technologies | TO-252 | MOSFET | ||
參數:制造商:Infineon,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:30 A,電阻汲極/源極... | ||||||
![]() |
IPD30N08S2L-21 | Infineon Technologies | TO-252 | 2640 | MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm | |
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:75 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD30N10S3L-34 | Infineon Technologies | TO-252 | 2827 | MOSFET OptiMOS-T PWR TRANS 100V 30A | |
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
IPD320N20N3 G | Infineon Technologies | TO-252-3 | 3303 | MOSFET N-KANAL POWER MOS | |
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:20 V,漏極連... | ||||||
![]() |
IPD33CN10N G | Infineon Technologies | TO-252 | MOSFET OptiMOS 2 PWR TRANST 100V 27A | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
IPD350N06L G | Infineon Technologies | TO-252 | MOSFET OptiMOS PWR TRANST 60V 29A | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD35N10S3L-26 | Infineon Technologies | TO-252 | MOSFET N-Channel enh MOSFET 100V | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
IPD400N06N G | Infineon Technologies | TO-252 | MOSFET N-CH 60V MOSFET | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:60 V,閘/源擊穿電壓:+/- 20 V,... | ||||||
![]() |
IPD40N03S4L-08 | Infineon Technologies | MOSFET N-Channel 30V MOSFET | |||
參數:制造商:Infineon,RoHS:是,包裝形式:Reel,零件號別名:IPD40N03S4L08ATMA1 IPD40N03S4L08XT SP0004759... | ||||||
![]() |
IPD49CN10N G | Infineon Technologies | PG-TO252-3 | MOSFET OptiMOS 2 PWR TRANST 100V 20A | ||
參數:制造商:Infineon,產品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V... | ||||||
![]() |
IPD50N03S207 | Infineon Technologies | TO-252 | MOSFET | ||
參數:制造商:Infineon,晶體管極性:N-Channel,汲極/源極擊穿電壓:30 V,閘/源擊穿電壓:+/- 20 V,漏極連續電流:50 A,電阻汲極/源極... |
68/305 首頁 上頁 [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] 下頁 尾頁